The is a cascadable frequency multiplier by 3 monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a P-HEMT process, 0.25�m gate length, via holes through the substrate, air bridges and electron beam gate lithography.
Broadband performances 12-13.5GHz 10dBm output power for +14dBm input power DC bias Vd=3.Volt @Id=60mA Chip size 0.10 mmInput frequency range Output frequency range Input power Output power @ Pin= 14dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Input frequency range Output frequency range Input power Output power Pin=14dBm 2 Harmonic rejection ( Pin 14dBm)VSWRout Output VSWR Id DC voltage Bias current
Vg Ta Drain bias voltage Drain bias current Gate bias voltage
Operation above anyone of these parameters may cause permanent damage of this device.