GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET � 175MHz SINGLE ENDED
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25�C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain � Source Breakdown Voltage Gate � Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 150�C 200�CELECTRICAL CHARACTERISTICS (Tcase = 25�C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain�Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 10mA VDS = 60W VDS = 175MHz VDS = 0 VDS = 28V VDS = 28V VGS = 1MHz VGS = 0 VGS = 1MHz IDQ = 100mA VGS = 0 VDS = 0 VDS = VGS = 3A
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.RTHj�case Thermal Resistance Junction � Case Max. / W
Figure 1 � Power Output and Efficiency vs. Power Input.
Figure 2 � Power Output & Gain vs. Power Input.