HomedatasheetD1007UK

D1007UK Datasheet

Purchase Online = ;; Package = DK ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 40 ;; Minimum Efficiency = 50 ;; Gain = 13 ;; Test Frequency (MHz) = 400 ;; Configuratio
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Description

Features, Applications

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET � 500MHz PUSH�PULL
FEATURES
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL at 1 GHz LOW NOISE
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25�C unless otherwise stated)

PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain � Source Breakdown Voltage * Gate � Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 150�C 200�C

ELECTRICAL CHARACTERISTICS (Tcase = 25�C unless otherwise stated) Parameter Test Conditions Min.

BVDSS IDSS IGSS gfs GPS Drain�Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 10mA VDS = 40W VDS = 400MHz IDQ = 100mA VGS = 0 VDS = 0 VDS = VGS = 1A VGS = 1MHz VGS = 0 VGS 1MHz 70

VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

RTHj�case Thermal Resistance Junction � Case Max. / W
Figure 1 Power Output and efficiency vs. Power Input.
Figure 2 Power Output and Gain vs. Power Input.

Features

Parameters

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Manufacturer information

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