GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET � 500MHz PUSH�PULL
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25�C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain � Source Breakdown Voltage Gate � Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 150�C 200�CELECTRICAL CHARACTERISTICS (Tcase = 25�C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS VGS(th) gfs Drain�Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 10mA VDS = 100mA VGS = 0 VDS = 0 VDS = VGS = 3A VDS = VGS 2.4 70
GPS VSWR Ciss Coss Crss Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance = 100W VDS = 500MHz IDQ 50 20:1 VGS = 1MHz VGS = 0 VGS % pF
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.RTHj�case Thermal Resistance Junction � Case Max. / W
Figure 2 Power Output and Gain vs. Input Power