GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET � 500MHz SINGLE ENDED
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN 13 dB MINIMUMAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25�C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Power Dissipation Drain � Source Breakdown Voltage * Gate � Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction TemperatureELECTRICAL CHARACTERISTICS (Tcase = 25�C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain�Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 10mA VDS = 10W VDS = 500MHz VDS = 0 VDS = 28V VDS = 28V VGS = 1MHz VGS = 0 VGS = 1MHz IDQ = 10mA VGS = 0 VDS = 0 VDS = VGS = 0.8A
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.RTHj�case Thermal Resistance Junction � Case Max. / W
Figure 1 Output Power and Gain vs. Input Power
Figure 2 Output Power and Efficiency vs. Input Power