Low-profil e, 4-lead mini-DIL pa ckage Suita ble for SONET applications High per formance High speed (<0.5 ns typical rise and fall time) High responsivity (0.85 A/W typical) Low da rk current Planar st ructure for high reliability Wavelength 50 �m core multimode fiber Wide operating temperature range +85 �C Wide bandwidth Qualification program : Bellcor TA-NWT-983 :
The D171-Type PIN Photodetectors feature a rear-illuminated planar diode structure with a low-capacitance 4-mil active area for maximum responsivity and speed.Applications
Long-reach SONET OC-3/OC-12 systems and SDH STM-1/STM-4 systems Secure digital data systems
The D171-Type Photodetector consists of a PIN coupled to a multimode fiber pigail. The device is available a 4-pin mini-DIL configuration (see Figure 3 and/or Table 1) and is ideal for long-reach (SONET) and other high-speed digital applications. The D171-Type PIN Photodetector is a rear-illuminated planar diode structure with a low-capacitance active area for maximum responsivity and speed. This device incorporates the new Laser 2000 manufacturing process from the Optoelectronics Products unit of Lucent Technologies Microelectronics Group. Laser is a low-cost platform that targets high-volume manufacturing and tight product distributions on all optical subassemblies. This platform incorporates an advanced optical design that is produced on Opto's highly automated production lines. The Laser 2000 platform is qualified for central office and uncontrolled environments, and can be used for applications requiring high perfomance and low cost.
PIN 3 1-697 Notes: This equivalent circuit is intended for modeling the package capacitance. Minimum capacitance is achieved by connecting the Nside to ground, applying a negative voltage to the P-side, and allowing the package to float (i.e., not connected to ground). Typical values are as follows: to 0.5 pF. LN, = 3.0 nH. RN, = 0.4 pF. = 0.1 pF.
Figure 3. D171-Type PIN Photodetector Schematic (Top View) Table 1. Pin Descriptions Pin Number Description NC Photodiode Cathode Photodiode Anode Case Ground
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Operating Temperature Range Storage Temperature Range Forward Voltage Reverse Voltage* Photocurrent Humidity Symbol TA Tstg VF VR Min �40 Max Unit mA %
CAUTION: This device is susceptible to damage as a result of electrostatic discharge. Take proper precautions during both handling and testing. Follow guidelines such as JEDEC Publication No. 108-A (Dec. 1988). Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD.
= 25 �C. Determined with a 50 load. Parameter Capacitance < 900 MHz)* Rise/Fall Time Dark Current Reverse Voltage Symbol tR/tF ID VR Min 2 Typ Max 5 30 Unit nA V
* The minimum capacitance configuration occurs when the N-side of the PIN is grounded and a negative voltage is applied to the P-side, with the package floating, not grounded (value reference only; not tested in manufacture).= 25 �C. Parameter Responsivity Wavelength Range Symbol R Min 0.75 1.1 Typ 0.85 Max 1.6 Unit A/W �m