HomedatasheetD1N60

D1N60 Datasheet

Diodes & Rectifiers
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Description

These N-Channel enhancement( D1N60 ) mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D1N60 Features • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V• Low gate charge ( typical 4.8nC)• Low Crss ( typical 3.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
Features

Parameters

[{"Name":"Reverse Voltage:","Value":"600 V"},{"Name":"Forward Voltage Drop:","Value":"1.05 V"},{"Name":"Forward Continuous Current:","Value":"1 A"},{"Name":" Max Surge Current:","Value":"30 A"},{"Name":"Reverse Current IR:","Value":"10 uA"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SILICON LABORATORIES
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