GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET � 1GHz SINGLE ENDED
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss
SIMPLE BIAS CIRCUITS LOW NOISE (Typical < 2dB NF) HIGH GAIN � 11dB MINIMUM SURFACE MOUNT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25�C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain � Source Breakdown Voltage Gate � Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 125�C 150�C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.ELECTRICAL CHARACTERISTICS (Tcase = 25�C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain�Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 10mA VDS = 750mW VDS = 1GHz VDS = 0V VGS = 1MHz VDS = 28V VGS = 0 VDS = 28V VGS = 0 IDQ = 10mA VGS = 0 VDS = 0 VDS = VGS = 0.2ARTHj�case Thermal Resistance Junction � Case Max. / W
T3 50 microstrip, 11mm long 50 microstrip, 15mm long 50 microstrip, 5mm long 1000pF NPO of 1.6mm tcw (half turn) C5, C6