GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET � 1GHz PUSH�PULL
SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25�C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain � Source Breakdown Voltage * Gate � Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 150�C 200�CELECTRICAL CHARACTERISTICS (Tcase = 25�C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Drain�Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency VGS = 0 VDS = 12.5V VGS = 10mA VDS = 20W VDS = 1GHz IDQ = 10mA VGS = 0 VDS = 0 VDS = VGS dB pF
VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.RTHj�case Thermal Resistance Junction � Case Max. / W