. for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.VCE(sat) 1.0 V (Max) 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
D45H 4 Rating Symbol VCEO VEB IC Unit Vdc Adc Collector�Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Total Power Dissipation 1 2Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc) ICES 10 �A IEBO 100 ON CHARACTERISTICS Collector�Emitter Saturation Voltage (IC = 8.0 Adc, = 0.4 Adc) (IC = 8.0 Adc, = 0.8 Adc) Base�Emitter Saturation Voltage (IC = 8.0 Adc, = 0.8 Adc) VCE(sat) Vdc 1.0 1.5 VBE(sat) Vdc DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1.0 MHz) Ccb pF D44H Series D45H Series 130 230 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, = 20 MHz) fT MHz D44H Series D45H Series 50 40 SWITCHING TIMES Delay and Rise Times (IC = 5.0 Adc, = 0.5 Adc) ns D44H Series D45H Series 300 135 Storage Time (IC = 5.0 Adc, = 0.5 Adc) ns D44H Series D45H Series 500 Fall Time (IC = 5.0 Adc, IB1 Adc) ns D44H Series D45H Series 140 100 IC, COLLECTOR CURRENT (AMPS) 10 �sFigure 1. Maximum Rated Forward Bias Safe Operating Area
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