HomedatasheetD44H11

D44H11 Datasheet

NPN Silicon Power Transistors
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Description

Features, Applications

STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED

APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIER

DESCRIPTION The D44H8, and D44H11 are silicon Multiepitaxial Planar NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D44H8, D44H11 are complementary with D45H8, D45H11.

Symbol V CEO V EBO CM P tot T stg Tj Parameter D44H8 Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current Total Dissipation o C Storage Temperature Max. Operating Junction Temperature to 150 Value D44H11 80

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CBO I EBO Parameter Collector Cut-off Current = 0) Emitter Cut-off Current = 0) Test Conditions CB = rated V CEO 100 mA for D44H8 for 60 40 Min. Typ. Max. 10 100 Unit �A

V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain


Features

Parameters

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Manufacturer information

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