This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4Q.VCEO IC TJ, Tstg Collector-Emitter Voltage Collector Current - Continuous
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Total Device Dissipation Derate above 25�C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D44H8*Device mounted on FR-4 PCB X 1.5 mm; mounting pad for the collector lead min. 6 cm.
V(BR)CEO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Cutoff Current Emitter-Cutoff Current = 100 mA, = 0 VCB = 0 VEB V �A
hFE VCE(sat ) VBE( sat) VBE( on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage 2.0 A, VCE 4.0 A, VCE 0.8 10 mA, VCE = 2.0Typical Pulsed Current Gain vs Collector Current
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