HomedatasheetD45C

D45C Datasheet

4.0 Ampere Complementary Silicon Power Transistors 80 Volts
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Description

Features, Applications

. for general purpose driver or medium power output stages CW or switching applications. Low Collector�Emitter Saturation Voltage 0.5 V (Max) High ft for Good Frequency Response Low Leakage Current

4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS
Collector�Emitter Voltage Collector�Emitter Voltage Emitter Base Voltage
Total Power Dissipation = 25_C Total Power Dissipation = 25_C

Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 6.0 ms, Duty Cycle 50%.

DC Current Gain (VCE = 1.0 Vdc, = 0.2 Adc) (VCE = 1.0 Vdc, = 1.0 Adc) (VCE = 1.0 Vdc, = 2.0 Adc)
� Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data

Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VBE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc) ICES 10 �A IEBO ON CHARACTERISTICS Collector�Emitter Saturation Voltage (IC = 1.0 Adc, = 50 mAdc) Base�Emitter Saturation Voltage (IC = 1.0 Adc, = 100 mAdc) VCE(sat) VBE(sat) Vdc DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, = 1.0 MHz) Ccb 40 pF Gain Bandwidth Product (IC = 20 mA, VCE = 4.0 Vdc, = 20 MHz) MHz SWITCHING TIMES Delay and Rise Times (IC = 1.0 Adc, = 0.1 Adc) 75 ns Storage Time (IC = 1.0 Adc, = 0.1 Adc) Fall Time (IC = 1.0 Adc, = 0.1 Adc) IC, COLLECTOR CURRENT (AMPS) VCE = 1.0 Vdc = 25�C hFE, DC CURRENT GAIN VCE, COLLECTOR�EMITTER VOLTAGE (VOLTS) 1.0 ms

Figure 2. Maximum Rated Forward Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data

Features

Parameters

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