|D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor
. for general purpose driver or medium power output stages CW or switching applications.
Low Collector-Emitter Saturation Voltage 0.5 V (Max) High ft for Good Frequency Response Low Leakage Current
Rating Symbol VCEO Value 80 90 Unit Vdc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage VCES VEB 4.0 6.0 Collector Current Continuous Peak (1) Total Power Dissipation = 25_C Total Power Dissipation = 25_C Operating and Storage Junction Temperature Range 30 1.67 Watts W/_C _C TJ, Tstg to 1504.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
TBD LLYWW 1 Base 2 Collector TBD WW = Device Code = Location Code = Year = Work Week 3 Emitter
Characteristic Symbol hFE Min Max Unit DC Current Gain (VCE = 1.0 Vdc, = 0.2 Adc) (VCE = 1.0 Vdc, = 1.0 Adc) (VCE = 1.0 Vdc, = 2.0 Adc)Collector Cutoff Current (VCE = Rated VCES, VBE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 1.0 Adc, = 50 mAdc) Base-Emitter Saturation Voltage (IC = 1.0 Adc, = 100 mAdc)DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, = 1.0 MHz)
Storage Time (IC = 1.0 Adc, = 0.1 Adc) Fall Time (IC = 1.0 Adc, = 0.1 Adc) 200
Figure 2. Maximum Rated Forward Bias Safe Operating Area
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