This device is designed for power amplifier, regulator and switching circuits speed is important. Sourced from process 5P. TO-220Absolute Maximum Ratings * TA=25�C unless otherwise noted
Symbol VCEO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value Units A �C
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature C. 2. Thses re steady state limits. The factory should be consulted on aplications involving pulsed or low duty cycle operations.
Symbol Off Characteristics V(BR)CEO ICES IEBO ICEO hFE VCE(sat) VBE(sat) fT Cob Parameter Test Condition = 0 VCB = 0 VEB = 0 VCE = 0 VCE = -0.2A VCE = -100mA VCE = -20mA VCB = 1MHz Min. V MHz pF Typ. Max. Units V �A Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
Symbol PD RJC Parameter Total Device Dissipation Derate above 25�C Thermal Resistance, Junction to Case Max. 0.32 3.1 Units W W/�C
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Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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