HomedatasheetD45H11

D45H11 Datasheet

PNP Silicon Power Transistors
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Description

Features, Applications

STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED

APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The D45H5, D45H8 and D45H11 are silicon Multi-Epitaxial Planar PNP transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D45H8, D45H11 are complementary with D44H8, D44H11.

Symbol V CEO V EBO IB P tot T stg Tj Parameter D45H5 Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current Base Current Total Dissipation 25 C Storage Temperature Max. Operating Junction Temperature

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CBO I EBO Parameter Collector Cut-off Current = 0) Emitter Cut-off Current = 0) Test Conditions CB = rated V CEO -100 mA for D45H5 for D45H8 for -1 V Min. Typ. Max. -10 -100 Unit �A

V CEO(sus) Collector-Emitter Sustaining Voltage 0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain


Features

Parameters

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Manufacturer information

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