These complementary silicon power transistors are designed for high�speed switching applications, such as switching regulators and high frequency inverters. The devices are also well�suited for drivers for high power switching circuits.15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS
Fast Switching Key Parameters Specified @ 100_C Low Collector�Emitter Saturation Voltage
VCE(sat) 1.0 V (Max) 8.0 A Complementary Pairs Simplify Circuit Designs 90 ns (Max)
Rating Symbol VCEO VCEV VEB IC ICM PD Value 80 Unit Vdc Adc Collector�Emitter Voltage Collector�Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Total Power Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 83 0.67 Watts W/_C _C TJ, Tstg to 150Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector�Emitter Sustaining Voltage (2) (IC = 25 mAdc, = 0) VCEO(sus) ICEV 80 Vdc Collector�Emitter Cutoff Current (VCE = Rated VCEV, VBE(off) = 4.0 Vdc) (VCE = Rated VCEV, VBE(off) = 4.0 Vdc, = 100_C) Emitter Base Cutoff Current (VEB = 7.0 Vdc, = 0) �Adc 100 10 IEBO �Adc ON CHARACTERISTICS (2) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 4.0 Adc, VCE = 1.0 Vdc) hFE 35 20 Collector�Emitter Saturation Voltage (IC = 8.0 Adc, = 0.4 Adc) (IC = 8.0 Adc, = 0.8 Adc) (IC = 15 Adc, = 3.0 Adc, = 100_C) VCE(sat) Vdc D44VH10 D45VH10 Base�Emitter Saturation Voltage (IC = 8.0 Adc, = 0.4 Adc) (IC = 8.0 Adc, = 0.8 Adc) (IC = 8.0 Adc, = 0.4 Adc, = 100_C) (IC = 8.0 Adc, = 0.8 Adc, = 100_C) VBE(sat) Vdc D44VH10 D45VH10 DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 0.1 Adc, VCE = 10 Vdc, = 20 MHz) Output Capacitance (VCB = 10 Vdc, = 0, ftest = 1.0 MHz) fT 50 MHz Cob 120 275 SWITCHING CHARACTERISTICS Delay Time Rise Time 50 ns Storage Time Fall Time (VCC = 20 Vdc, = 8.0 Adc, = 0.8 Adc) tf (2) Pulse Test: Pulse Width v 300 �s, Duty Cycle v 2%.
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