HomedatasheetD572C22SS

D572C22SS Datasheet

2.5 Gbits/s Digital 1.5 M Uncooled DFB Laser Module For High Bandwidth Applications
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Description

Features, Applications

1.5 �m Uncooled DFB FastLight TM Laser Module for 2.5 Gbits/s and High Bandwidth Applications
Applications
SONET OC-48/STM-16 systems Telecommunications Secure digital data systems

Easily board mounted Gull-wing leads No additional heat sinks required Low-cost alternative to industry-standard, 14-pin isolated laser module (ILM) Highly efficient DFB-MQW laser structure allows for lower threshold and drive currents, and reduced power consumption

The low-profile D572-Type Laser Module is ideally suited for OC-48 SONET and other high-speed digital applications.

Features
Description

The D572-Type Uncooled Laser Module consists of a laser diode coupled to a single-mode fiber pigtail. The device is available in a standard, 8-pin configuration (see Figure 1 and/or Table 1) and is ideal for long-reach (SONET) and other high-speed digital applications. The module includes a narrow linewidth (<1 nm) DFB-MQW single-mode laser and an InGaAs PIN photodiode back-facet monitor in a hermetically sealed package. This package is optimized for a 25 input impedance and allows for dc biasing through an internal bias tee. A thermistor has been included for feedback to board-level bias circuitry, if needed.

* Telcordia Technologies is a trademark of Bell Communications Research, Inc.

8-pin package suitable for SONET applications Narrow linewidth, distributed feedback, multiquantum-well 1550 nm laser with single-mode fiber pigtail Operating temperature range: +85 �C versions under development) No TEC required High output power: typical 2.0 mW peak power coupled into single-mode fiber Hermetically sealed active components Internal back-facet monitor Built-in thermistor and Bias T 25 input impedance Internal isolator

1.5 �m Uncooled DFB FastLight Laser Module for 2.5 Gbits/s and High-Bandwidth Applications

The device characteristics listed in this document are met 2.0 mW output power. Higher- or lower-power operation is possible. Under conditions of a fixed photodiode current, the change in optical output is typically �0.5 dB over an operating temperature range to +70 �C. This device incorporates the new Laser 2000 manufacturing process from the Optoelectronic Products unit of Lucent Technologies Microelectronics Group. Laser is a low-cost platform that targets high-volume manufacturing and tighter product distributions on all optical subassemblies. This platform incorporates an advanced optical design that is produced on one of the highly automated production lines at the Opotelectronic manufacturing facility. The Laser 2000 platform is qualified for the central office and uncontrolled environments, and can be used for applications requiring high performance and low cost.

Table 1. Pin Descriptions Pin Number Connection Thermistor Thermistor, package GND Laser dc bias cathode choke Photodiode cathode Photodiode anode Laser diode anode Laser RF input cathode 25 Laser diode anode

Figure 1. D572-Type Uncooled DFB Mini 8-Pin Laser Module Schematic, Top View

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Maximum Peak Laser Drive Current or Maximum Fiber Power* Peak Reverse Laser Voltage: Laser Monitor Forward Current Operating Case Temperature Range Storage Case Temperature Range Lead Soldering Temperature/Time Relative Humidity (noncondensing)

1.5 �m Uncooled DFB FastLight Laser Module for 2.5 Gbits/s and High-Bandwidth Applications

CAUTION: This device is susceptible to damage as a result of electrostatic discharge (ESD). Take proper precautions during both handling and testing. Follow EIA * Standard EIA-625. Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD.

Table 2. Electro-Optical Characteristics (over operating temperature range unless otherwise noted) Parameter Operating Temperature Range Optical Output Power Threshold Current Modulation Current Symbol T PF ITH IMOD Test Conditions CW, peak T = full range CW, = 2.0 mW, 25 �C CW, IMON = constant, T = full range CW, = 2.0 mW, = 2.0 mW, 2.0 mW CW, 2.0 mW IMON = constant, = (0.9) ITH 1200 ps/nm--1600 ps/nm; typical, 1350 ps/nm CW At bias coil 5 V Min Typ Max Unit mW mA �W/mA �A nA nm/�C

Slope Efficiency2 Center Wavelength3 Spectral Width (�20 dB) Side-mode Suppression Ratio Tracking Error Spontaneous Emission Rise/Fall Times Dispersion Penalty Optical Return Loss Forward Voltage Input Impedance Monitor Current Monitor Dark Current Wavelength Temperature Coefficient

1. BOL value; EOL = 80 mA. 2. The slope efficiency is used to calculate the modulation current for a desired output power. This modulation current plus the threshold current comprise the total operating current for the device. 1510 nm wavelength also available. 4. Corrected for electrical pulse fall time. VR = reverse voltage.


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