APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning.FEATURES
ARRAY OR 12 DIODES LOW INPUT CAPACITANCE SUITABLE FOR DIGITAL LINE PROTECTION
DESCRIPTION ARRAY or 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltages by clamping action.
COMPLIES WITH FOLLOWING STANDARDS : IEC1000-4-22 level 4: 15kV (air discharge) 8kV (contact discharge)
ABSOLUTE MAXIMUM RATINGS (Tamb = 25�C) Symbol VRRM IPP P Tstg Tj TL Parameter Repetitive peak reverse voltage (for one single diode) Repetitive peak forward current * Power dissipation Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 8/20 �s Value to Unit W �C* The surge is repeated after the device returns to ambient temperature
THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit �C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25�C) Symbol VFP VF IR Peak forward voltage Parameter IPP DA108S1 DA112S1 Max. Unit VVCC connected between REF1 and REF2 Input applied : DC bias + 950 mV(RMS) at 1 MHZ
Fig.2 : Typical peak forward voltage characteristics (8/20�s pulse)