DA121T Datasheet

Silicon Switching Diode


Features, Applications

Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width 10 ms Symbol VR IF IFM(surge) Max 200 500 Unit V mA

Characteristic Total Device Dissipation, FR�4 Board = 25�C Derated above 25�C Thermal Resistance, Junction to Ambient (1) Total Device Dissipation, FR�4 Board = 25�C Derated above 25�C Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range FR�4 @ Minimum Pad (2) FR�4 Inch Pad Symbol 225 1.8 RJA 360 2.9 RJA TJ, Tstg +150 mW mW/�C �C/W 555 mW mW/�C �C/W 1 CASE 463 SOT�416/SC�75 STYLE 2 Max Unit 3

Preferred devices are recommended choices for future use and best overall value.

Characteristic Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR 75 V) (VR = 150�C) (VR = 150�C) Capacitance (VR = 1.0 MHz) Reverse Recovery Time (IF = 10 mA, 50 ) (Figure 1) Stored Charge (IF 500 ) (Figure 2) Forward Recovery Voltage (IF = 10 mA, = 20 ns) (Figure 3) Symbol IR CD trr QS VFR V �A Min Max Unit mV

Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Recovery Charge Equivalent Test Circuit
Figure 3. Forward Recovery Voltage Equivalent Test Circuit



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Manufacturer information


ON Semiconductor - ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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