HomedatasheetDA28F016XS15

DA28F016XS15 Datasheet

16-mbit ( 1 Mbit X 16, 2 Mbit X 8 ) Synchronous Flash Memory
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Features, Applications

Backwards-Compatible with 28F008SA Command-Set 2 �A Typical Deep Power-Down 1 mA Typical Active I CC Current in Static Mode 16 Separately-Erasable/Lockable 128-Kbyte Blocks 1 Million Erase Cycles per Block State-of-the-Art 0.6 �m ETOXTM IV Flash Technology

Effective Zero Wait-State Performance to 33 MHz Synchronous Pipelined Reads SmartVoltage Technology User-Selectable V CC User-Selectable PP 0.33 MB/sec Write Transfer Rate Configurable or x16 Operation 56-Lead TSOP and SSOP Type I Package

Intel's 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining very high read performance with the intrinsic nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for improved system performance. The innovative capabilities of the 28F016XS enable the design of directexecute code and mass storage data/file flash memory systems. The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution available today. Its synchronous pipelined read interface, flexible VCC and VPP voltages, extended cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read performance to 33 MHz. The 28F016XS's dual read voltage allows the same component to operate at either or 5.0V VCC. Programming voltage at 5V VPP minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V VPP option maximizes program/erase performance. Its high read performance combined with flexible block locking enable both storage and execution of operating systems/application software and fast access to large data tables. The 28F016XS is manufactured on Intel's 0.6 �m ETOX IV process technology.

Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. The 28F016XS may contain design defects or errors known as errata. Current characterized errata are available upon request. *Third-party brands and names are the property of their respective owners. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, 60056-7641 or call 1-800-879-4683

PAGE 1.0 INTRODUCTION............................................ 7 1.1 Product Overview........................................ 7 2.0 DEVICE PINOUT........................................... 10 2.1 Lead Descriptions...................................... 12 3.0 MEMORY MAPS........................................... 14 3.1 Extended Status Register Memory Map..... 15 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS............. 16 4.1 Bus Operations for Word-Wide Mode (BYTE# = VIH)........................................... 16 4.2 Bus Operations for Byte-Wide Mode (BYTE# = VIL)........................................... 4.3 28F008SA--Compatible Mode Command Bus Definitions.......................................... 4.4 28F016XS--Enhanced Command Bus Definitions................................................. 19 4.5 Compatible Status Register....................... 20 4.6 Global Status Register............................... 21 4.7 Block Status Register................................ 22 4.8 Device Configuration Code........................ 23 4.9 SFI Configuration Table............................. 23

PAGE 5.0 ELECTRICAL SPECIFICATIONS................. 24 5.1 Absolute Maximum Ratings....................... 24 5.2 Capacitance............................................... 24 5.3 Transient Input/Output Reference Waveforms............................................... 5.4 DC Characteristics (VCC 5.5 DC Characteristics (VCC 30 5.6 Timing Nomenclature................................. 5.7 AC Characteristics--Read Only Operations................................................ 5.8 AC Characteristics for WE#--Controlled Write Operations....................................... 5.9 AC Characteristics for CE X#--Controlled Write Operations....................................... 44 5.10 Power-Up and Reset Timings.................. 48 5.11 Erase and Program Performance............. 49 6.0 MECHANICAL SPECIFICATIONS................ 51 APPENDIX A: Device Nomenclature and Ordering Information.................................. 53 APPENDIX B: Additional Information............... 54


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