HomedatasheetDCR1475SY

DCR1475SY Datasheet

2805a 2800v Disc Phase Control Thyristor
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Description

Features, Applications

KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1000V/�s 300A/�s
See Package Details for further information. Fig. 1 Package outline

Part Number Repetitive Peak Voltages VDRM VRRM DCR1475SV30 3000 Tvj to 125�C. IDRM = IRRM = 250mA. VDRM, VRRM 10ms 1/2 sine. VDSM & VRSM = VDRM & VRRM + 100V respectively. Conditions

When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1475SY30 for a 3000V 'Y' outline variant or DCR1475SV30 for a 3000V 'V' outline variant If a lower voltage grade is required, then use VDRM/100 for the grade required e.g.: DCR1475SY26 for a 2600V 'Y' outline variant etc. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

Tcase = 60�C unless staed otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 4101 A Parameter Conditions Max. Units

Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 2508 A

Tcase = 80�C unless staed otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 3175 A Parameter Conditions Max. Units

Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1850 A

Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 0 Max. x 106 Units kA A2s

Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 43kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force


Features

Parameters

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Manufacturer information

DYNEX SEMICONDUCTOR
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