Low Voltage Operation 5.5 V) Low On-Resistance - rDS(on): 1 W Typ. Fast Switching - tON : 17 ns, tOFF: 13 ns Low Leakage TTL/CMOS Compatible 6-Pin SC-70 PackageReduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space
Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold CircuitsDESCRIPTION
The is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 W) and small physical size (SC70), the DG2012 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2012 is built on Vishay Siliconix's low voltage submicron CMOS process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG2012.
Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
Reference to GND V+. +6 V IN, COM, NC, NOa. -0.3 to (V+ 0.3 V) Continuous Current (NO, NC and COM Pins). "100 mA Peak Current. "300 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix). to 150�C Power Dissipation (Packages)b 250 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/_C above 70_CTest Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd rON Matchd VNO, VNC, VCOM rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) 2.2 V VNO, VNC V/1.5 V, VCOM 1.8 V, VCOM V/0.9 V INO, INC 10 mA Full Room Fulld Room 1.8 V, VCOM 0 to V+, INO, INC 10 mA Room Fulld Room Fulld Room Fulld W VInput High Voltage Input Low Voltage Input Capacitanced Input Currentf
Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON = 1 nF, VGEN 0 V, RGEN 0 W, Figure = 5 pF, = 1 MHz VNO or VNC pF F Figures 1 and 2 Room Fulld Room Fulld Room VIN 0 or V+, = 1 MHz Room pC ns
Analog Signal Ranged On-Resistance rON Flatness rON MatchFlat VNO, VNC, VCOM rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) 3.3 V VNO, VNC V/3 V, VCOM 2.7 V, VCOM V/1.5 V, INO INC 10 mA Full Room Full Room 2.7 V, VCOM 0 to V+, INO, INC 10 mA Room Full Room Full Room Full W V
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON = 1 nF, VGEN 0 V, RGEN 0 W, Figure = 5 pF, = 1 MHz VNO or VNC pF F Figure 1 and 2 Room Full Room Full Room VIN 0 or V+, = 1 MHz Room pC nsPower Supply Range Power Supply Current V+ I+ VIN V mA