DG212BDJ Datasheet

Improved Quad CMOS Analog Switches


Features, Applications


"22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance--rDS(on): 50 W Low Leakage--ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching--tON: 120 ns Low Charge Injection--Q: 1 pC

Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG211/212 Space Savings (TSSOP)


Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits


The DG211B/212B analog switches are highly improved versions of the industry-standard DG211/212. These devices are fabricated in Vishay Siliconix' proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. "22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup.

All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle

The is a normally closed switch and the is a normally open switch. (See Truth Table.)

Voltages Referenced to V� V+. 44 V GND. 25 V Digital Inputsa VS, VD. (V�) V to (V+) or 30 mA, whichever occurs first Current, Any Terminal. 30 mA Peak Current, or D (Pulsed at 1 ms, 10% duty cycle max). 100 mA Storage Temperature. to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc. mW 16-Pin Narrow SOIC and TSSOPd. 640 mW Notes: a. Signals on SX, DX, or INX exceeding or V� will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C

Test Conditions Unless Otherwise Specified Parameter Analog Switch

Analog Signal Ranged Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) 1 mA Full Room Full Room Full Room Full Room Full 15 V

Input Voltage High Input Voltage Low Input Current Input Capacitance VINH VINL IINH or IINL CIN VINH or VINL Full Room mA pF

Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk tON tOFF Q CS(off) CD(off) CD(on) OIRR XTALK =10 V See Figure = 1000 pF, Vg= = 1 MHz = 1 MHz 15 p pF, = 1 VRMS, 100 kH kHz Room 200 pC

Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN I� IL VOP Room Full Room Full Room Full 50 mA



Manufacturer information

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