HomedatasheetDG411HS

DG411HS Datasheet

Precision Monolithic Quad SPST CMOS Analog Switches
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Description

Features, Applications

Precision Monolithic Quad SPST CMOS Analog Switches
FEATURES

44-V Supply Max Rating "15-V Analog Signal Range On-Resistance--r DS(on): 25 W Fast Switching--tON: 68 ns Ultra Low Power--PD: 0.35 mW TTL, CMOS Compatible Single Supply Capability

Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing

APPLICATIONS

Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals

DESCRIPTION

The DG411HS series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 mW) with high speed (tON: 68 ns), the DG411HS family is ideally suited for portable and battery powered industrial and military applications. To achieve high-voltage ratings and superior switching performance, the DG411HS series was built on Vishay Siliconix's high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411HS and DG412HS respond to opposite control logic as shown in the Truth Table. The DG413HS has two normally open and two normally closed switches.


V+ to V-. 44 V GND to V-. 25 V VL. (GND V) to (V+) +0.3 V Digital Inputsa, VS, VD. (V-) V to (V+) or 30 mA, whichever occurs first Continuous Current (Any Terminal). 30 mA Peak Current, or D (Pulsed 1 ms, 10% Duty Cycle). 100 mA Storage Temperature (AK, AZ Suffix). to 150_C (DJ, DY, DN Suffix). 125_C 16-Pin Narrow SOICd. mW 16-Pin CerDIPe. 16-Pin (4x4mm) QFNf. 1880 mW Notes: a. Signals on SX, DX, or INX exceeding or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 25_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C f. Derate 23.5 mW/_C above 70_C

Test Conditions Unless Specified Parameter Analog Switch

Input Current, VIN Low Input Current, VIN High Input Capacitancee IIL IIH CIN VIN Under Test 0.8 V VIN Under Test = 2.4 MhZ Full Room mA pF

Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) = 1 MHz "10 V See Figure 2 DG413HS Only, = 5 pF, = 1 MHz Room Full Room Full Room ns

Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IIL IGND Room Full -16.5 V VIN 5 V Room Full Room Full Room Full www.vishay.com


Features

Parameters

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