DG417BDY Datasheet

Precision CMOS Analog Switches


Features, Applications


"15-V Analog Signal Range On-Resistance--rDS(on): 15 W Fast Switching Action--tON: 100 ns TTL and CMOS Compatible MSOP-8 and SOIC-8 Packaging

Wide Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Reduced Board Space Improved Reliability


Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems Hard Disk Drives


The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417B series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419B, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.

To achieve high-voltage ratings and superior switching performance, the DG417B series is built on Vishay Siliconix's

The DG417B and DG418B respond to opposite control logic levels as shown in the Truth Table.

DG417BDJ 8 Pin Plastic MiniDIP DG417BDY 8 Pin Narrow SOIC DG417BDQ 8 Pin MSOP DG417BAK/883 8 Pin CerDIP DG418BAK, DG418BAK/883

8-Pin Plastic MiniDIP 125_C 8-Pin Narrow SOIC 8-Pin MSOP 8-Pin CerDIP DG419BAK, DG419BAK/883
NOTE: SMD product is dual marked with /883 number.

20 V V+. 20 V GND. 25 V VL. (GND V) to (V+) 0.3 V Digital Inputsa VS, VD. V to (V+) or 30 mA, whichever occurs first Current, (Any Terminal) Continuous. 30 mA Current or D) Pulsed 1 ms, 10% duty cycle. 100 mA Storage Temperature. to 150_C Power Dissipation (Package)b 8-Pin Plastic MiniDIPc. 8-Pin Narrow SOICc. 8-Pin MSOPd. 8-Pin CerDIPe. 600 mW

Notes: a. Signals on SX, DX, or INX exceeding V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 5.3 mW/_C above 75_C d. Derate 4 mW/_C above 70_C e. Derate 8 mW/_C above 75_C

Test Conditions Unless Otherwise Specified Parameter Analog Switch
Input Current VIN Low Input Current VIN High IIL IIH Full mA

Turn-On Time Turn-Off Time Transition Time Break-Before-Make Time Delay Charge Injection Off-Isolatione Channel-To-Channel Crosstalke Source Off Capacitance Drain Off Capacitance Channel On Capacitance tON tOFF tTRANS tD Q OIRR XTALK CS(off) CD(off) CD(on) = 1 MHz, "10 V See Switching Time Test Circuit = 5 nF, = 1 MHz DG418B DG419B Room Full Room Full Room Full Room dB ns



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