"15-V Analog Signal Range On-Resistance--rDS(on): 20 W Fast Switching Action--tON: 100 ns Ultra Low Power Requirements--PD:35 nW TTL and CMOS Compatible MiniDIP and SOIC Packaging 44-V Supply Max Rating
D Wide Dynamic Range D Low Signal Errors and Distortion D Break-Before-Make Switching Action D Simple Interfacing D Reduced Board Space D Improved ReliabilityAPPLICATIONS
Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems D Hard Disk DrivesDESCRIPTION
The DG417/418/419 monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
To achieve high-voltage ratings and superior switching performance, the DG417 series is built on Vishay Siliconix'sThe DG417 and DG418 respond to opposite control logic levels as shown in the Truth Table.
NOTE: SMD product is dual marked with /883 number.
Voltages Referenced to V� V+. 44 V GND. 25 V VL. (GND V) to (V+) 0.3 V Digital Inputsa VS, VD. (V�) V to (V+) or 30 mA, whichever occurs first Current, (Any Terminal) Continuous. 30 mA Current or D) Pulsed 1 ms, 10% duty cycle. 100 mA Storage Temperature (AK Suffix). to 150_C (DJ, DY Suffix). to 125_C Power Dissipation (Package)b 8-Pin Plastic MiniDIPc. mW 8-Pin Narrow SOICd. mW 8-Pin CerDIPe. 600 mW Notes: a. Signals on SX, DX, or INX exceeding or V� will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 6.5 mW/_C above 75_C e. Derate 12 mW/_C above 75_CTest Conditions Unless Otherwise Specified Parameter Analog Switch
Input Current VIN Low Input Current VIN High IIL IIH Full mA 0.5
Turn-On Time Turn-Off Time Transition Time Break-Before-Make Time Delay Charge Injection Source Off Capacitance Drain Off Capacitance Channel On Capacitance tON tOFF tTRANS tD Q CS(off) = 1 MHz, 0 V CD(off) CD(on) V S See Switching it hi Time Ti Test Circuit = 10 nF, Vgen 0 V, Rgen DG418 DG419 Room Full Room Full Room Full Room pC ns
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I� IL IGND V, V� VIN 5 V Room Full Room Full Room Full Room Full 1 5