HomedatasheetDG9431DV

DG9431DV Datasheet

Low-voltage Single SPDT Analog Switch
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Description

Features, Applications

FEATURES

Low Voltage Operation +5 V) Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC Low Power Consumption TTL/CMOS Compatible ESD Protection 2000 V (Method 3015.7) Available in TSOP-6 and SOIC-8

Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space (TSOP-6)
APPLICATIONS

Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Military Radio PBX, PABX Guidance and Control Systems

DESCRIPTION

The is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 20 W) and small physical size (TSOP-6), the DG9431 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9431 is built on Vishay Siliconix's low voltage BCD-15 process. Minimum ESD protection, per Method V. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG9431. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.

Reference to GND V+. +13 V IN, COM, NC, NOa. -0.3 to (V+ 0.3 V) Continuous Current (Any terminal). "20 mA Peak Current. "40 mA (Pulsed 1ms, 10% duty cycle) ESD (Method 2000 V Storage Temperature (D Suffix). to 125�C Power Dissipation (Packages)b 8-Pin Narrow Body SOICc. 400 mW Notes: a. Signals on SX, DX, or INX exceeding or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C

Test Conditions Otherwise Unless Specified P Parameter Analog Switch

Analog Signal Ranged Drain-Source On-Resistance rDS(on) Matchd rDS(on) Flatnessf VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC 2.7 V ICOM 5 mA VNO or VNC 1.5 V VNO or VNC = 1 and 2 V VNO or VNC V, VCOM V, VNO or VNC VCOM = VNO or VNC Full Room Full Room Full Room Full Room Full W V

or NC Off Leakage Current g COM Off Leakage Current g Channel-On Leakage Current g

Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injection Off-Isolation Source-Off Capacitance Channel-On Capacitance tON tOFF td QINJ OIRR CS(off) CD(on) = 1 nF, Vgen 0 V, Rgen = 5 pF, = 1 MHz = 1 MHz Room 32 VNO or VNC 1.5 5V Room Full Room Full Room dB ns

Power Supply Range Power Supply Current 3.3 V, VIN V mA

Notes: a. Room = 25�C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com S FaxBack 408-970-5600 Document Number: B, 26-Jul-99

Analog Signal Ranged Drain-Source On-Resistance rDS(on) Matchd rDS(on) Flatnessf VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC 4.5 V ICOM 5 mA VNO or VNC 1.5 V VNO or VNC 1, 2, and 3 V VNO or VNC V, VCOM V, VNO or VNC VCOM = VNO or VNC Full Room Full Room Full Room Full Room Full W V

or NC Off Leakage Current COM Off Leakage Current Channel-On Leakage Current

Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injection Off-Isolation NC and NO Capacitance Channel-On Capacitance tON tOFF td QINJ OIRR C(off) CD(on) = 1 nF, Vgen 0 V, Rgen = 5 pF, = 1 MHz = 1 MHz Room 32 VNO or VNC 3 0V Room Full Room Full Room dB ns

Power Supply Range Power Supply Current 5.5 V, VIN V mA

Notes: e. f. Room = 25�C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Difference of min and max values.


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