HomedatasheetFDB8860_F085

FDB8860_F085 Datasheet

Transistors
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Description

( FDB8860_F085 )MOSFET 30V N-Ch PowerTrench FDB8860_F085 Features • RDS(ON) = 1.9m (Typ), VGS = 5V, ID = 80A• Qg(5) = 89nC (Typ), VGS = 5V• Low Miller Charge• Low QRR Body Diode• UIS Capability (Single Pulse and Repetitive Pulse)• Qualified to AEC Q101 • RoHS Compliant FDB8860_F085 Applications • 12V Automotive Load Control• Start / Alternator Systems• Electronic Power Steering Systems• ABS• DC-DC Converters
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage:","Value":"30 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"+/- 20 V"},{"Name":"Continuous Drain Current:","Value":"31 A"},{"Name":"Resistance Drain-Source RDS (on):","Value":"1.9 mOhms"},{"Name":"Maximum Operating Temperature:","Value":"+ 175 C"},{"Name":" Fall Time:","Value":"49 ns"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Power Dissipation:","Value":"254 W"},{"Name":"Rise Time:","Value":"213 ns"},{"Name":"","Value":""}]

Manufacturer information

SEME-LAB [SEME LAB]
Warm Hint

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