FDC6333C Datasheet



These FDC6333C is N & P-Channel MOSFETs are produced usingFairchild Semiconductor’s advanced PowerTrenchprocess that has been especially tailored to minimizeon-stateresistanceandyetmaintainsuperiorswitching performance.These devices have been designed to off erexceptional power dissipation in a very small footprintfor applications where the bigger more expensiveSO-8 and TSSOP-8 packages are impractical. FDC6333C Features • Low gate charge• High performance trench technology for extremely low RDS(ON)• SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick) FDC6333C Applications • DC/DC converter• Load switch• LCD display inverter


[{"Name":"Transistor Polarity ","Value":"N and P-Channel"},{"Name":"Drain-Source Breakdown Voltage","Value":"- 30 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 16 V, +/- 25 V"},{"Name":"Continuous Drain Current ","Value":"+ 2.5 A, - 2 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.095 Ohms"},{"Name":"Configuration ","Value":"Dual "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style ","Value":"SMD/SMT"},{"Name":"Package / Case ","Value":"SSOT-6"},{"Name":"Packaging","Value":"Reel"}]

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