FDC634P Datasheet



This FDC634P is P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. FDC634P Features • –3.5 A, –20 V. RDS(ON) = 80 mW @ VGS = –4.5 V RDS(ON) = 110 mW @ VGS = –2.5 V• Low gate charge (7.2 nC typical)• High performance trench technology for extremely low RDS(ON) FDC634P Applications • Battery management• Load switch• Battery protection


[{"Name":"Transistor Polarity","Value":"P-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"- 20 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 8 V"},{"Name":"Continuous Drain Current","Value":"3.5 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"80 mOhms"},{"Name":"Configuration","Value":"Single Quad Drain "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SSOT-6 "},{"Name":"Packaging","Value":"Reel "}]

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