HomedatasheetFDC638P

FDC638P Datasheet

FETs - Single
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Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.The FDC638P is well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. FDC638P Features • -4.5 A, -20 V. RDS(ON) = 0.045 W @ VGS = -4.5 V RDS(ON) = 0.065 W @ VGS = -2.5 V.• Low gate charge (13nC typical).• High performance trench technology for extremely low RDS(ON).• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss)","Value":"20V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"4.5A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"48 mOhm @ 4.5A, 4.5V"},{"Name":"Vgs(th) (Max) @ Id","Value":"1.5V @ 250μA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"14nC @ 4.5V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"1160pF @ 10V"},{"Name":"Power - Max","Value":"800mW"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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