FDD6670A Datasheet

Discrete Semiconductor Products


This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. FDD6670A Features • 66 A, 30 V RDS(ON) = 8 mW @ VGS = 10 V• RDS(ON) = 10 mW @ VGS = 4.5 V• Low gate charge• Fast Switching• High performance trench technology for extremelylow RDS(ON) FDD6670A Applications • DC/DC converter• Motor Drives


[{"Name":"FET Type","Value":"MOSFET N-Channel, Metal Oxide"},{"Name":"FET Feature","Value":"Logic Level Gate"},{"Name":"Drain to Source Voltage (Vdss)","Value":"30V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"15A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"8 mOhm @ 15A, 10V"},{"Name":"Vgs(th) (Max) @ Id","Value":"3V @ 250μA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"22nC @ 5V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"1755pF @ 15V"},{"Name":"Power - Max","Value":"1.3W"},{"Name":"Mounting Type","Value":"Surface Mount"},{"Name":"Other Names","Value":"FDD6670ATR"}]

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