FDD6690A Datasheet



FDD6690A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. FDD6690A Features • 46 A, 30 V RDS(ON) = 12 mW @ VGS = 10 V RDS(ON) = 14 mW @ VGS = 4.5 V• Low gate charge• Fast Switching Speed• High performance trench technology for extremely low RDS(ON) FDD6690A Applications • DC/DC converter• Motor Drives


[{"Name":"Drain-Source Breakdown Voltage","Value":"30 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V"},{"Name":"Continuous Drain Current","Value":"46 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"12 mOhms"},{"Name":"Maximum Operating Temperature","Value":"+ 175 C"},{"Name":"Forward Transconductance gFS (Max / Min)","Value":"47 S"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":" Power Dissipation","Value":"3.3 W"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information


Seiko Instruments Inc. Is a Japanese company which head office is located in 8, Nakase 1-chome, Mihama-ku, Chiba-shi, Chiba 261-8507, Japan . It’s business lines are: Watches Business Watches, Watch Movements Electronic Components Business Quartz crystals, Micro batteries, etc. Precision Mechatronics Business Inkjet printer heads, Hard disk components, Thermal printers, Compact precision components, Machine tools, FA, Musical instrument accessories, Radiation detection and measurement systems, etc.

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