FDN308P Datasheet

FETs - Single


This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). FDN308P Features • –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON)• SuperSOT TM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint FDN308P Applications • Power management • Load switch • Battery protection


[{"Name":"Drain to Source Voltage (Vdss) ","Value":"20V"},{"Name":"Current - Continuous Drain (Id) @ 25° C ","Value":"1.5A "},{"Name":"Rds On (Max) @ Id, Vgs ","Value":"125 mOhm @ 1.5A, 4.5V "},{"Name":"Vgs(th) (Max) @ Id ","Value":"1.5V @ 250μA "},{"Name":"Gate Charge (Qg) @ Vgs ","Value":"5.4nC @ 4.5V "},{"Name":"Input Capacitance (Ciss) @ Vds ","Value":"341pF @ 10V "},{"Name":"Power - Max ","Value":"460mW "},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
Request for Datasheet

  • Part No     :
  • Your Email:
  • Content     :

related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us


One to One Customer Service