HomedatasheetFDN308P

FDN308P Datasheet

FETs - Single
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Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). FDN308P Features • –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON)• SuperSOT TM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint FDN308P Applications • Power management • Load switch • Battery protection
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss) ","Value":"20V"},{"Name":"Current - Continuous Drain (Id) @ 25° C ","Value":"1.5A "},{"Name":"Rds On (Max) @ Id, Vgs ","Value":"125 mOhm @ 1.5A, 4.5V "},{"Name":"Vgs(th) (Max) @ Id ","Value":"1.5V @ 250μA "},{"Name":"Gate Charge (Qg) @ Vgs ","Value":"5.4nC @ 4.5V "},{"Name":"Input Capacitance (Ciss) @ Vds ","Value":"341pF @ 10V "},{"Name":"Power - Max ","Value":"460mW "},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

FUXIN JIEKEDA ELECTRONIC CO.,LTD.
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