FDN336P Datasheet



This FDN336P 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion. FDN336P Features •–1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V RDS(ON) = 0.27 Ω @ VGS = –2.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely low RDS(ON)• SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint


[{"Name":"Drain-Source Breakdown Voltage","Value":"- 20 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 8 V"},{"Name":"Continuous Drain Current","Value":"- 1.3 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"200 mOhms"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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