FDN340P Datasheet



This FDN340P is P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications:load switching and power management,battery charging circuits, and DC/DC conversion. FDN340P Features • 2A, 20 V RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 110 mW @ VGS = 2.5 V• Low gate charge (7.2 nC typical).• Highperformance trench technology for extremely low RDS(ON) .• High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.


[{"Name":"Transistor Polarity","Value":"P-Channel"},{"Name":"Drain-Source Breakdown Voltage","Value":"- 20 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 8 V "},{"Name":"Continuous Drain Current","Value":"2 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"60 mOhms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SuperSOT "},{"Name":"Packaging","Value":"Reel "}]

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