HomedatasheetFDN352AP

FDN352AP Datasheet

P-Channel Logic Level MOSFET
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Description

General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features
■ –1.3 A, –30V RDS(ON) = 180 m @ VGS = –10V
   –1.1 A, –30V RDS(ON) = 300 m @ VGS = –4.5V
■ High performance trench technology for extremely low RDS(ON).
■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

Applications
■ Notebook computer power management

Features

Parameters

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Manufacturer information

TY SEMICONDUCTOR
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