Home datasheet FDN359A

FDN359A

MOSFET
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Description

This FDN359A is N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. FDN359A Features • 2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V RDS(ON) = 0.060 W @ VGS = 4.5 V.• Very fast switching.• Low gate charge (5nC typical).• High power version of industry standard SOT-23• package. Identical pin out to SOT-23 with 30% higher• power handling capability.
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"30 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V "},{"Name":"Continuous Drain Current","Value":"2.7 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.037 Ohms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SSOT-3 "},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]

Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.


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