FDS6681Z Datasheet



This FDS6681Z P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. FDS6681Z Features • –20 A, –30 V. RDS(ON) = 4.6 mΩ @ VGS = –10 V RDS(ON) = 6.5 mΩ @ VGS = –4.5 V• Extended VGSS range (–25V) for battery applications• HBM ESD protection level of 8kV typical (note 3)• High performance trench technology for extremely low RDS(ON)• High power and current handling capability• Termination is Lead-free and RoHS Compliant


[{"Name":"Transistor Polarity","Value":"P-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"- 30 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 25 V "},{"Name":"Continuous Drain Current","Value":"20 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"3.8 mOhms"},{"Name":"Configuration","Value":"Single Quad Drain Triple Source "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SOIC-8 Narrow"},{"Name":"Packaging","Value":"Reel "}]

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