FDV301N Datasheet



This N-Channel logic level enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. FDV301N Features &bull; 25 V, 0.22 A continuous, 0.5 A Peak. RDScON, = 5 Q @ VGS= 2.7 V RDScON, = 4Q @ VGS= 4.5 V.&bull; Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th, < 1 .06V.&bull; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model&bull; Replace multiple NPN digital transistors with one DMOS FET.


[{"Name":"Drain-Source Breakdown Voltage","Value":"25 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"8 V "},{"Name":"Resistance Drain-Source RDS (on)","Value":"5 Ohms "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Forward Transconductance gFS (Max / Min)","Value":"0.2 S "},{"Name":"Fall Time","Value":"6 ns"},{"Name":"Minimum Operating Temperature","Value":"- 55 C "},{"Name":"Rise Time","Value":"6 ns "},{"Name":"Typical Turn-Off Delay Time","Value":"3.5 ns "},{"Name":"","Value":""}]

Manufacturer information


Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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