FDW2508 Datasheet



This FDW2508 is P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. FDW2508 Features • –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.8 V• Low gate charge(26nC typical)• High performance trench technology for extremely low RDS(ON)• Low profile TSSOP-8 package FDW2508 Applications • Power management• Load switch• Battery protection


[{"Name":"Transistor Polarity","Value":"P-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"- 12 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 8 V "},{"Name":"Continuous Drain Current ","Value":"6 A "},{"Name":"Resistance Drain-Source RDS (on) ","Value":"14 mOhms"},{"Name":"Configuration","Value":"Dual Dual Source "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT"},{"Name":"Package / Case ","Value":"TSSOP-8"},{"Name":"Packaging","Value":"Reel "}]

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