HomedatasheetFM25V02-GTR

FM25V02-GTR Datasheet

F-RAM
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Description

The FM25V02-GTR is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. FM25V02-GTR Features • Organized as 32,768 x 8 bits• High Endurance 100 Trillion (1014) Read/Writes• 10 Year Data Retention• NoDelay™ Writes• Advanced High-Reliability Ferroelectric Process• For more, see pdf.
Features

Parameters

[{"Name":"Product Category","Value":"F-RAM "},{"Name":"Operating Supply Voltage","Value":"2 V to 3.6 V "},{"Name":"Operating Temperature Range","Value":"- 40 C to + 85 C "},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

SILICON LABORATORIES
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