HomedatasheetFOD817CSD

FOD817CSD Datasheet

Transistor Output Optocouplers
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Description

The FOD817CSD consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-linepackage. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FOD817CSD Features•AC input response (FOD814 only)•Applicable to Pb-free IR reflow soldering•Compact 4-pin package•Current transfer ratio in selected groups:FOD617A: 40–80% FOD817: 50–600%FOD617B: 63–125% FOD817A:80–160%FOD617C:100–200% FOD817B: 130–260%FOD617D:160–320% FOD817C:200–400%FOD814: 20–300% FOD817D:300–600%FOD814A: 50–150%•C-UL, UL and VDE approved•High input-output isolation voltage of 5000Vrms•Minimum BV CEO of 70V guaranteed•Higher operating temperatures (versus H11AXXX counterparts) FOD817CSD ApplicationsFOD814 Series•AC line monitor•Unknown polarity DC sensor•Telephone line interface FOD617 and FOD817 Series•Power supply regulators•Digital logic inputs•Microprocessor inputs
Features

Parameters

[{"Name":"Maximum Collector Emitter Voltage: ","Value":"70 V "},{"Name":"Maximum Collector Emitter Saturation Voltage: ","Value":"0.2 V "},{"Name":"Isolation Voltage: ","Value":"5000 Vrms "},{"Name":"Maximum Forward Diode Voltage: ","Value":"1.4 V "},{"Name":"Maximum Input Diode Current: ","Value":"50 mA "},{"Name":"Maximum Collector Current: ","Value":"50 mA "},{"Name":"Maximum Reverse Diode Voltage: ","Value":"6 V "},{"Name":"Maximum Rise Time: ","Value":"6 V "},{"Name":"Maximum Operating Temperature: ","Value":"+ 110 C "},{"Name":"Minimum Operating Temperature: ","Value":"- 55 C "}]

Manufacturer information

HTC [HTC KOREA TAEJIN TECHNOLOGY CO.]
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