HomedatasheetFQB34P10TM

FQB34P10TM Datasheet

Transistors
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Description

This P-Channel enhancement mode power MOSFET( FQB34P10TM ) is produced using Fairchild Semiconductor®’s proprietaryplanar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. FQB34P10TM Features • -33.5 A, -100 V, RDS(on) = 60 mΩ (max) @VGS = -10 V,ID = -16.75 A• Low Gate Charge (Typ. 85 nC)• Low Crss (Typ. 170 pF)• 100% Avalanche Tested• 175°C Maximum Junction Temperature Rating
Features

Parameters

[{"Name":" Drain-Source Breakdown Voltage:","Value":"- 100 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"+/- 25 V"},{"Name":"Continuous Drain Current:","Value":"- 33.5 A"},{"Name":"Drain-Source On Resistance:","Value":"60 mOhms"},{"Name":"Maximum Operating Temperature:","Value":"+ 175 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Forward Transconductance - Min:","Value":"23 S"},{"Name":" Rise Time:","Value":"250 ns"},{"Name":"Fall Time:","Value":"210 ns"},{"Name":"","Value":""}]

Manufacturer information

SILICON LABORATORIES
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