HomedatasheetFQD12N20LTMF085

FQD12N20LTMF085 Datasheet

200V Logic Level N-Channel MOSFET
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Description

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.

Features
• 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
• RoHS Compliant
• Qualified to AEC Q101

 

Features

Parameters


Manufacturer information

FAIRCHILD SEMICONDUCTOR

Fairchild has a rich history as a pioneer in the semiconductor industry and that pioneering spirit endures today. In an era where diversity can dilute focus and hamper innovation, we specialize in the development and manufacturing of a complete portfolio of low- to high-power solutions for the mobile, industrial, cloud, automotive, lighting, and computing industries. Fairchild is one of the most reliable partners in the industry, offering the shortest time from concept to silicon, expert FAEs for customer support, and a flexible, multi-source supply chain. Our vision is clear – anticipate the power efficiencies demanded by tomorrow’s electronic products and deliver an amazing design experience

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