HomedatasheetFQD18N20V2TM

FQD18N20V2TM Datasheet

Transistors
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Description

FQD18N20V2TM This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. FQD18N20V2TM Features • 15 A, 200 V, RDS(on) = 140 mΩ @ VGS = 10 V, ID = 7.5 A• Low Gate Charge (Typ. 20 nC)• Low Crss (Typ. 25 pF)• 100% Avalanche Tested
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"200 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V"},{"Name":"Continuous Drain Current","Value":"15 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.14 Ohms"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Forward Transconductance gFS (Max / Min): ","Value":"11 S"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]

Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.


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