FQD5N50C Datasheet



These FQD5N50C are N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology. FQD5N50C Features • 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 V• Low gate charge ( typical 18nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability


[{"Name":"Transistor Polarity","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage ","Value":"500 V "},{"Name":"Gate-Source Breakdown Voltage ","Value":"+/- 30 V "},{"Name":"Continuous Drain Current ","Value":"4 A "},{"Name":"Resistance Drain-Source RDS (on) ","Value":"1.4 Ohms"},{"Name":"Configuration","Value":"Single"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT"},{"Name":"Package / Case","Value":"TO-252 "}]

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