HomedatasheetFQPF10N60

FQPF10N60 Datasheet

FETs - Single
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Description

The FQPF10N60 is a N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology. FQPF10N60 Features • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 18 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage","Value":"600 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V "},{"Name":"Continuous Drain Current ","Value":"9.5 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.73 Ohms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Mounting Style ","Value":"Through Hole"},{"Name":"Package / Case","Value":"TO-220F "},{"Name":"Packaging ","Value":"Tube "}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]

Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.


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