FQPF12N60C Datasheet

600V N-Channel MOSFET


These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. FQPF12N60C Features • 12A, 600V, RDS(on)= 0.65Ω@VGS= 10 V• Low gate charge ( typical 48 nC)• Low Crss ( typical 21pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliant


[{"Name":"Drain to Source Voltage (Vdss) ","Value":"600V"},{"Name":"Current - Continuous Drain (Id) @ 25° C ","Value":"12A"},{"Name":"Rds On (Max) @ Id, Vgs ","Value":"650 mOhm @ 6A, 10V"},{"Name":"Vgs(th) (Max) @ Id ","Value":"4V @ 250μA"},{"Name":"Gate Charge (Qg) @ Vgs ","Value":"63nC @ 10V"},{"Name":"Input Capacitance (Ciss) @ Vds ","Value":"2290pF @ 25V"},{"Name":"Power - Max ","Value":"51W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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